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Product Data Sheet
March 5, 2007
K Band High Linearity Power Amplifier
Key Features
* * * * * * * *
TGA4530
Frequency Range: 17 - 21 GHz 20 dB Gain 30 dBm nominal P1dB 42dBm nominal OTOI 20 dB Return Loss Bias 5 - 7 V @ 825 mA 0.25 um 3MI pHEMT technology Chip Dimensions 2.43 x 1.45 x .1mm
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 825mA
25 20 Gain 15 IRL 10 ORL 5 0 -5 -10 -15 -20 -25 -30 -35 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 Frequency (GHz)
44 42 40 OTOI @ 20dBm/Tone 38 P1dB 36 34 32 30 28 26 24 17.0 17.5 18.0 18.5 19.0 19.5 20.0 20.5 21.0 Frequency (GHz)
Primary Applications
* * Point-to-Point Radio K Band Sat-Com
Sparameters (dB)
Product Description
The TriQuint TGA4530 is a High Power Amplifier MMIC for 17 - 21GHz applications. The part is designed using TriQuint's 0.25um 3MI pHEMT production process. The TGA4530 nominally provides 30dBm output power @ 1dB gain compression and 42dBm OTOI at a bias of 7V and 825mA. The typical gain is 20dB. The part is ideally suited for low cost emerging markets such as Point-to-Point Radio, and K-band Satellite Communications. The TGA4530 is 100% DC and RF tested on-wafer to ensure performance compliance. The TGA4530 has a protective surface passivation layer providing environmental robustness. Lead-Free & RoHS compliant
P1dB & OTOI (dBm)
Note: Device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
TGA4530
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id | IG | PIN PD TCH TM TSTG
PARAMETER
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE
8V -5V TO 0V 1.75 A 35 mA 26 dBm 5.8 W 150 C 320 C -65 to 150 C
NOTES
2/
2/ 2/ 2/, 3/ 3/, 4/
1/ 2/ 3/ 4/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. When operated at this power dissipation with a base plate temperature of 65 C, the median life is 1.0E+6 hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
0
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
TGA4530
TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal)
PARAMETER
Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Saturated Output Power @ Pin = 16dBm, Psat Output Power @ 1dB Gain Compression, P1dB Output Third Order Intercept, OTOI @ 20dBm/Tone Small Signal Gain Temperature Coefficient Noise Figure @ 19GHz
TYPICAL
17 - 21 7 825 -0.45 20 20 20 32 30 42 -0.03 6
UNITS
GHz V mA V dB dB dB dBm dBm dBm dB/0C dB
TABLE III THERMAL INFORMATION
PARAMETER TEST CONDITIONS Vd = 7 V Id = 825 mA Pdiss = 5.78 W Small Signal Vd = 7 V Id = 1050 mA @ Psat Pout = 1.6 W (RF) Pdiss = 5.75 W TCH O ( C) 150 JC (C/W) 14.7 TM (HRS) 1.0E+6
JC Thermal Resistance (channel to Case)
JC Thermal Resistance (channel to Case)
150
14.7
1.0E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 65 C baseplate temperature. .
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
Measured Data
Bias Conditions: Idq = 825 mA
TGA4530
26 25 24 23 22 Gain (dB) 21 20 19 18 17 16 15 16 17 18 19 20 21 22 23 24 25 Frequency (GHz) -10 -12 -14 -16 -18 Return Loss (dB) -20 -22 -24 -26 -28 -30 -32 -34 -36 16 17 18 19 20 21 Frequency (GHz) 22 23 24 25
4
Vd = 4V - 7V
4V_825mA 5V_825mA 6V_825mA 7V_825mA
Vd = 7V
IRL ORL
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
Measured Data
Bias Conditions: Vd = 4V - 7V, Idq = 825 mA
TGA4530
35 34 Saturated Power @ Pin = 16dBm (dBm) 33 32 31 30 29 28 27 26 25 16.0
35 Output Power @ 1dB Gain Compression (dBm) 34 33 32 31 30 29 28 27 26 25 16.0
Vd = 4V - 7V
7V_825mA 6V_825mA 5V_825mA 4V_825mA
16.5
17.0
17.5
18.0 18.5 19.0 Frequency (GHz)
19.5
20.0
20.5
21.0
Vd = 4V - 7V
7V_825mA 6V_825mA 5V_825mA 4V_825mA
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
Frequency (GHz)
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
Measured Data
Bias Conditions: Vd = 7V, Idq = 825 mA
TGA4530
33
Vd = 7V
32 31 Output Power (dBm) 30 29 28 27 26 25 16.0 16.5 17.0 17.5 18.0 18.5 19.0 Frequency (GHz) 19.5 20.0
Psat P1dB
20.5
21.0
36 34 32 30 Pout (dBm) & Gain (dB) 28 26 24 22 20 18 16 14 12 10 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
Pin (dBm)
1080
Vd = 7V, @ 19GHz
Pout Id
1060 1040 1020 1000 980 960 Id (mA)
6
Gain
940 920 900 880 860 840 820
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
Measured Data
Bias Conditions: Vd=4V - 7V, Idq = 825 mA, f = 1MHz
TGA4530
44 43 42 OTOI @ 20dBm/Tone (dBm) 41 40 39 38 37 36 35 34 33 32 31 30 17.0 17.5 18.0 18.5 19.0 19.5 Frequency (GHz) 20.0 20.5 21.0
7V_825mA 6V_825mA 5V_825mA 4V_825mA
Vd = 4V - 7V
-30
Vd = 7V
-35
-40 IM3 (dBc)
-45
-50
17GHz 18GHz 19GHz 20GHz 21GHz
-55
-60 11 12 13 14 15 16 17 18 19 Pout/Tone (dBm) 20 21 22 23 24
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
Measured Data
Bias Conditions: Vd = 6V, Idq = 825 mA
TGA4530
-40C +25C +70C
27 26 25 24 23 Gain (dB) 22 21 20 19 18 17 16 16 17 18 19
Vd = 6V
20 21 Frequency (GHz)
22
23
24
25
35 Saturated Power @ Pin =16dBm (dBm) 34 33 32 31 30 29 28 27 26 25 17.0 17.5 18.0 18.5 19.0 19.5 Frequency (GHz) 20.0 20.5 21.0
8
Vd = 6V
-40C +25C +70C
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
Mechanical Drawing
0.095 (0.004) 1.448 (0.057) 1.353 (0.053) 1.278 (0.050)
0.547 (0.022)
1.385 (0.055)
2.345 (0.092)
1.363 (0.054)
0.371 (0.015) 0.256 (0.010) 0.095 (0.004) 0 0 0.086 (0.003) 1.385 (0.055) 2.335 2.430 (0.092) (0.096)
Units: Millimeters (inches) Thickness: 0.10 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.05 (0.002) GND IS BACKSIDE OF MMIC Bond pad # 1 Bond pad # 2 Bond pad # 3 Bond pad # 4 Bond pad # 5 Bond pad # 6 Bond pad # 7 (RF Input) (Vg) (Vd) (Vdet) (RF Out) (Vd) (Vref) 0.100 x 0.150 0.100 x 0.100 0.150 x 0.100 0.081 x 0.081 0.100 x 0.150 0.150 x 0.100 0.081 x 0.081 (0.004 x 0.006) (0.004 x 0.004) (0.006 x 0.004) (0.003 x 0.003) (0.004 x 0.006) (0.006 x 0.004) (0.003 x 0.003)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
TGA4530 Recommended Assembly Diagram
Vg
15 Ohm 1uF
Vd
15 Ohm 1uF
0.01uF
0.01uF
RF In
100pF 100pF
RF Out
100pF
0.01uF
Vd
15 Ohm 1uF
Vd = 5 to 7V Id = 825mA Vg = -0.45V (Typical for 7V Vd bias)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
Power Detector
+5V
TGA4530
40K
40K
External
Vref Vdet
MMIC
16pF
50
50
RF out Vd = 6V, Id = 825mA Vg = -0.5 V (typ.)
10
Vref - Vdet (V)
1
17 GHz 18 GHz 19 GHz 20 GHz
10 15 20 25 30 35
0.1
Output Power (dBm)
10
Vref - Vdet (V)
1
-40 Deg C +25 deg C +70 deg C
0.1 5 10
Output Power (dBm)
15
20
25
30
35
11
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
March 5, 2007
TGA4530
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
0
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C.
Ordering Information
Part TGA4530 Package Style Chip
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
12
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

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